IRIS Institutional Research Information System - OPENBS Open Archive UniBS

COLALONGO, Luigi
 Distribuzione geografica
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Continente #
NA - Nord America 6.793
EU - Europa 3.074
AS - Asia 1.741
SA - Sud America 20
Continente sconosciuto - Info sul continente non disponibili 17
AF - Africa 14
OC - Oceania 11
AN - Antartide 1
Totale 11.671
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Nazione #
US - Stati Uniti d'America 6.770
CN - Cina 1.093
UA - Ucraina 997
PL - Polonia 498
IT - Italia 431
DE - Germania 377
HK - Hong Kong 275
FI - Finlandia 231
SG - Singapore 160
IE - Irlanda 154
GB - Regno Unito 139
IN - India 132
SE - Svezia 73
FR - Francia 68
BE - Belgio 45
TR - Turchia 33
CA - Canada 22
CZ - Repubblica Ceca 18
BR - Brasile 17
EU - Europa 17
NL - Olanda 16
VN - Vietnam 15
JP - Giappone 14
AU - Australia 11
MU - Mauritius 10
RU - Federazione Russa 8
TW - Taiwan 7
KR - Corea 6
ES - Italia 5
CH - Svizzera 3
CI - Costa d'Avorio 2
MA - Marocco 2
NO - Norvegia 2
RO - Romania 2
SA - Arabia Saudita 2
SI - Slovenia 2
AR - Argentina 1
AT - Austria 1
AZ - Azerbaigian 1
BY - Bielorussia 1
CL - Cile 1
CO - Colombia 1
EE - Estonia 1
GS - Georgia del Sud e Isole Sandwich Australi 1
IR - Iran 1
JO - Giordania 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
MX - Messico 1
PT - Portogallo 1
Totale 11.671
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Città #
Fairfield 1.114
Jacksonville 701
Woodbridge 695
Ashburn 539
Houston 517
Warsaw 495
Cambridge 446
Seattle 431
Wilmington 421
Ann Arbor 379
Princeton 300
Chandler 288
Hong Kong 268
Nanjing 252
Beijing 171
Dublin 154
Dearborn 139
Brescia 125
Helsinki 117
Nanchang 110
Shenyang 82
Des Moines 79
Milan 78
Singapore 75
New York 74
Hebei 62
Changsha 58
San Diego 58
Jiaxing 48
Jinan 46
Brussels 45
Boardman 39
Tianjin 39
Shanghai 33
Kocaeli 28
Kunming 27
London 26
Verona 23
Guangzhou 20
Hangzhou 19
Ningbo 18
Brno 17
Zhengzhou 17
Lanzhou 16
Los Angeles 15
Toronto 15
Dong Ket 14
West Jordan 14
Taizhou 13
Rome 11
Washington 11
Florianópolis 10
San Francisco 10
Changchun 9
Orange 9
Taiyuan 9
Norwalk 8
Redwood City 8
Bologna 7
Frankfurt am Main 7
Chiswick 6
Haikou 6
Hefei 6
Hyderabad 6
Kilburn 6
Mantova 6
Munich 6
Nuremberg 6
Santa Clara 6
Amsterdam 5
Duncan 5
Forlì 5
Sydney 5
Indiana 4
Napoli 4
São Paulo 4
Taipei 4
Walnut 4
Atlanta 3
Barcelona 3
Canberra 3
Central 3
Chengdu 3
Florence 3
Horibata-cho 3
Markham 3
Melbourne 3
Montichiari 3
Pavia 3
Phoenix 3
Pune 3
Sant'anastasia 3
Seoul 3
Smarr 3
Tokyo 3
Travagliato 3
Voghera 3
Appignano 2
Auburn Hills 2
Casalecchio di Reno 2
Totale 9.016
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Nome #
Ultra-high gain diffusion-driven organic transistor 270
Unified Mobility Model for Disordered Organic Semiconductors 261
100mV-1.2V Fully-Integrated DC-DC Converters for Thermal Energy Harvesting 208
Reduction of EMI susceptibility in CMOS bandgap reference circuits 198
A 30 mV–2.5 V DC/DC Converter for Energy Harvesting 173
DC/Dynamic Surface-Potential-Based-Model of InGaZnO Transistors for Circuit Simulation 162
Analysis of electrical characteristics of polycrystalline silicon thin-film transistors under static and dynamic conditions 152
A Voltage Efficient PMOS Charge Pump Architecture 150
Increasing the Immunity to Electromagnetic Interferences of CMOS Operational Amplifiers 149
A Bidirectional Differential Cascode Voltage Switch DC–DC Buck-Boost Converter for Low Voltage Application 136
Accurate Analytical Physical Modeling of Amorphous InGaZnO Thin-Film Transistors Accounting for Trapped and Free Charges 134
A Fully Integrated Self-Tuned Transformer Based Step-Up Converter 123
The Role of the Density of States on the Hole Mobility of Disordered Organic Semiconductors 123
A charge control analytical model for organic thin film transistors 119
Unified Mobility Model for Amorphous Organic Materials 118
Measurements of EMI susceptibility of precision voltage references 118
A Modular Boost Converter with Low Switch Stress and High Conversion Ratio for Automotive Applications 118
Charge Pump Architectures Based on Dynamic Gate Control of the Pass-Transistors 117
Accurate analytical approximation of the OTFTs surface potential by means of the Lagrange Reversion Theorem 117
A Charge-Based OTFT Model for Circuit Simulation 116
A 150 mV-1.2 V Fully-Integrated DC-DC Converter for Thermal Energy Harvesting 115
Single-transistor method for the extraction of the contact and channel resistances in organic field-effect transistors 113
A new integrated charge pump architecture using dynamic biasing of pass transistors 112
Unified drain-current model of complementary p- and n-type OTFTs 109
A Fully-Integrated Inductor-Based 1.8-6V Step-up Converter 108
Unified physical DC model of staggered amorphous InGaZnO transistors 108
A Review of DC/DC Converters for Ultra Low Voltage Energy Harvesting 106
Half-MOS Single-Poly EEPROM Cell in Standard CMOS Process 105
Automatic Scaling Procedures for Analog Design Reuse 102
An Analytical Model for Organic Thin-Film Transistors Operating in the Subthreshold Region 102
Space-charge-limited current in organic light emitting diodes 102
Non-isolated multiple-input boost converter for energy harvesting 102
A new lumped model for on-chip inductors including substrate currents 101
Robust design of low EMI susceptibility CMOS OpAmp 101
Impact of Energetic Disorder and Localization on the Conductivity and Mobility of Organic Semiconductors 101
A New Electroluminescent Organic Dual-Gate Field-Effect Transistor 101
A Highly Efficient CMOS Charge Pump for 1.2V Supply Voltage 100
A new simple P-MOS charge pump for low voltage operations 99
Robust design of bandgap voltage references with low EMI susceptibility 97
Scaling Rules and Parameter Tuning Procedure for Analog Design Reuse in Technology Migration 97
A new analytical model for amorphous-silicon thin-film transistors including tail and deep states 96
Transport Physics and Device Modeling of Zinc Oxide Thin Film Transistors - Part I: Long Channel Devices 95
A 0.2-1.2 V DC/DC boost converter for power harvesting applications 95
A 1.2V-5V High Efficiency CMOS Charge Pump for Non-Volatile Memories 95
Floating Body Effects in Polysilicon Thin-Film Transistors 94
A Physically-Based Analytical Model for a-Si Devices Including Drift and Diffusion Currents 94
Half-MOS Based Single-Poly EEPROM Cell With Program and Erase Bit Granularity 94
Hermite interpolation method (HiM): Compact surface potential MOSFET model based on the Hermite polynomial 94
AC analysis of amorphous silicon devices 93
Cross-talk simulation in CMOS micromachined gas-sensors with electrothermal actuation 92
Numerical Analysis of Poly-TFTs Under Off-Conditions 91
Compact model of amorphous InGaZnO thin-film transistors based on the symmetric quadrature of the accumulation charge 91
Charge-based MOSFET model based on the Hermite interpolation polynomial 91
ROW-Type Methods Applied to the Time Discretization of Device Equations 90
Simulation and design of amorphous silicon thin-film transistors for driving color detectors 88
Increasing the Immunity to Electromagnetic Interferences in a Bandgap Voltage Reference 87
SQM-OTFT: A compact model of organic thin-film transistors based on the symmetric quadrature of the accumulation charge considering both deep and tail states 87
Numerical analysis of ISFET and LAPS devices 86
Unipolar Differential Logic for Large-Scale Integration of Flexible a-IGZO Circuits 86
Investigation on anomalous leakage currents in poly-TFTs including dynamic effects 84
Organic Thin Film Transistors: an Analytical Model for Circuit Simulation 84
Physically-based analytical model for a-Si devices including drift and diffusion currents 84
A Comprehensive Comparison of EMI Immunity in CMOS Amplifier Topologies 84
Charge Pump Circuit with Reuse of Accumulated Electrical Charge 83
A 0.2V-1.2V DC/DC Boost Converter for Power Harvesting Applications 83
Transient Analysis of Silicon Devices Using the Hydrodynamic Model 83
Determination of hot-carrier induced interface state density in polycrystalline silicon thin-film transistors 83
NVM (nonvolatile memory) device 83
Analytical approximation of the InGaZnO thin-film transistors surface potential 83
A 1.2 to 8V Charge Pump with Improved Power Efficiency for Non-Volatile Memories 82
Numerical analysis of electrical characteristics of polysilicon thin film transistors fabricated by excimer laser crystallisation 82
Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility 81
Analysis of conductivity degradation in gold/platinum-doped silicon 81
A Survey of Low Voltage and Low Power Amplifier Topologies 81
An Efficient Numerical Method to Solve the Time-Dependent Semiconductor Equations Including Trapped Charge 80
A 0.2V-1.2V Converter for Power Harvesting Applications 80
High EMI Immunity CMOS OpAmp: Design and Measurements 79
Transient Analysis of Silicon Devices Using the Hydrodynamic Model 79
Non-Volatile Memory Device with Single-Polysilicion-Layer Memory Cells 79
Modeling of light-addressable potentiometric sensors 78
A 150mV-1.2V Fully-Integrated DC-DC Converterfor Thermal Energy Harvesting 77
On the Design of Ultra Wideband FCC Compliant Integrated Radars 77
Dynamic model of silicon devices with energy-localized trap centers 77
Organic Thin Film Transistors: a DC Model for Circuit Simulation 76
Charge-Based Model of Symmetric Double-Gate Organic Thin-Film Transistors 76
An Analytical, Temperature- Dependent Model for Majority- and Minority-Carrier Mobility in Silicon Devices 75
Dispositivo di Memoria Non Volatile con Celle di Memoria a Singolo Strato di Polisilicio 75
Accurate Modeling of Amorphous Indium-Gallium-Zinc-Oxide TFTs Deposited on Plastic Foil 75
Analysis and Modeling of Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors 73
Cross-Talk Simulation in CMOS Micromachined Gas Sensors with Electrothermal Actuation 72
Memoria Non Volatile Integrata con Celle di Memoria a Singolo Strato di Polisilicio Programmabile Tramite Iniezione di Elettroni Caldi Indotti da Corrente Elettrica da Banda a Banda e Cancellabile Tramite Tunneling di Flower-Nordheim 72
Embedded Non-Volatile Memory With Single Polysilicon Layer Memory Cells Erasable Through Band To Band Tunneling Induced Hot Electron And Programmable Through Fowler-Nordheim Tunneling 72
Embedded Non-Volatile Memory With Single Polysilicon Layer Memory Cells Programmable Through Channel Hot Electrons And Erasable Through Fowler-Nordheim Tunneling 72
Quantitative physical analysis of gate-insulator/organic-semiconductor interaction and its impact on the OTFT performance 69
memoria non volatile integrata con celle di memoria a singolo strato di polisilicio cancellabile tramite iniezione di elettroni caldi indotti da corrente elettrica da banda a banda e programmabile tramite tunneling di flower-nordheim 69
Embedded Non-Volatile Memory With Single Polysilicon Layer Memory Cells Programmable Through Band-To-Band Tunneling-Induced Hot Electron And Erasable Through Fowler-Nordheim Tunneling 69
A new simple P-MOS charge pump for low voltage operation 68
Transport Physics and Device Modeling of Zinc Oxide Thin Film Transistors - Part II: Contact Resistance in Short Channel Devices 68
High Electric Field Phenomena in Polycrystalline Silicon Thin-Film Transistors 68
Dickson charge pump using integrated inductors in complementary metal–oxide semiconductor technology Authors 68
Totale 10.046
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Categoria #
all - tutte 52.199
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 52.199
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.973 0 101 120 407 211 418 370 373 240 423 109 201
2020/20212.234 48 311 95 220 122 268 68 290 290 221 209 92
2021/20221.132 38 217 24 45 25 83 53 71 57 161 107 251
2022/2023946 178 33 9 94 88 260 0 74 135 17 31 27
2023/20241.034 51 21 85 96 48 118 45 61 279 38 8 184
2024/202539 26 13 0 0 0 0 0 0 0 0 0 0
Totale 12.246