Half-MOS Based Single-Poly EEPROM Cell With Program and Erase Bit Granularity

A single-poly electrically erasable programmable ROM (EEPROM) cell compatible with standard CMOS process is proposed. With respect to the classical embedded NOR cell, it can be programmed and erased by Fowler-Nordheim tunneling with single-bit granularity. The memory cell is based on a novel writing-inhibition scheme enabled by the combination of the body effect with multiple half-MOS devices. Experimental results on programming, erasing, inhibition, reading, and cycling endurance are provided using a 0.13 \mu{\rm m} standard CMOS process.