In this paper, a mathematical model for the dc current of organic thin film transistors is proposed. The model is based on the variable range hopping transport theory, while the mathematical expression of the current is formulated by means of the channel accumulation charge. It accurately accounts for below-threshold, linear, and saturation operating conditions via a single formulation and it does not require the explicit definition of the threshold and saturation voltages. Furthermore, thanks to the charge control approach, it is straightforwardly generalizable to dynamic behavior.

A charge control analytical model for organic thin film transistors

TORRICELLI, Fabrizio;KOVACS VAJNA, Zsolt Miklos;COLALONGO, Luigi
2008-01-01

Abstract

In this paper, a mathematical model for the dc current of organic thin film transistors is proposed. The model is based on the variable range hopping transport theory, while the mathematical expression of the current is formulated by means of the channel accumulation charge. It accurately accounts for below-threshold, linear, and saturation operating conditions via a single formulation and it does not require the explicit definition of the threshold and saturation voltages. Furthermore, thanks to the charge control approach, it is straightforwardly generalizable to dynamic behavior.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/20860
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