In this letter, we show a new device architecture, which we call field-induced contacts light-emitting transis- tor (FICOLET), to fabricate high-efficiency electroluminescent dual-gate organic field-effect transistors. The FICOLET is a dual- gate transistor in which two accumulated regions, not completely overlapped, one of electrons and the other of holes, are formed. When a positive bias voltage is applied to the drain contact, electrons and holes are pushed by the combined action of the carrier diffusion and of the electric field to the opposite side of the semiconductor. They recombine far from the electrodes with a theoretical recombination efficiency of 100%, low exciton quenching, and current densities that, in high injection condi- tions, can exceed the lasing threshold.
A New Electroluminescent Organic Dual-Gate Field-Effect Transistor
COLALONGO, Luigi;TORRICELLI, Fabrizio;KOVACS VAJNA, Zsolt Miklos
2015-01-01
Abstract
In this letter, we show a new device architecture, which we call field-induced contacts light-emitting transis- tor (FICOLET), to fabricate high-efficiency electroluminescent dual-gate organic field-effect transistors. The FICOLET is a dual- gate transistor in which two accumulated regions, not completely overlapped, one of electrons and the other of holes, are formed. When a positive bias voltage is applied to the drain contact, electrons and holes are pushed by the combined action of the carrier diffusion and of the electric field to the opposite side of the semiconductor. They recombine far from the electrodes with a theoretical recombination efficiency of 100%, low exciton quenching, and current densities that, in high injection condi- tions, can exceed the lasing threshold.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
