Amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) are widely used in backplanes of high-definition displays thanks to the high field effect mobility of a-IGZO. To design high-performances and high-functionality a-IGZO circuits accurate physical modeling is required. In this work we propose a physically based analytical model of the drain current of a-IGZO TFTs. Both trapped and free charge are accounted for, and according to many experimental observations the charge transport is described by multiple trapping and release (MTR). The model is compared with both measurements of TFTs fabricated on flexible substrate and numerical simulations, showing negligible error. The resulting mathematical expressions are suitable for computer-aided design implementation and for process characterization.
Accurate Modeling of Amorphous Indium-Gallium-Zinc-Oxide TFTs Deposited on Plastic Foil
GHITTORELLI, MATTEO;TORRICELLI, Fabrizio;KOVACS VAJNA, Zsolt Miklos;COLALONGO, Luigi
2014-01-01
Abstract
Amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) are widely used in backplanes of high-definition displays thanks to the high field effect mobility of a-IGZO. To design high-performances and high-functionality a-IGZO circuits accurate physical modeling is required. In this work we propose a physically based analytical model of the drain current of a-IGZO TFTs. Both trapped and free charge are accounted for, and according to many experimental observations the charge transport is described by multiple trapping and release (MTR). The model is compared with both measurements of TFTs fabricated on flexible substrate and numerical simulations, showing negligible error. The resulting mathematical expressions are suitable for computer-aided design implementation and for process characterization.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
