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Capacitive Humidity Sensor With Controlled Performances, Based On Porous Al2o3 Thin-Film Grown On Sio2-Si Substrate

SBERVEGLIERI, Giorgio;FAGLIA, Guido
1994-01-01
1994
Nessuno
PE3_5 Electronic properties of materials and transport
SENSORS AND ACTUATORS. B, CHEMICAL
sì
2-s2.0-0028410271
WOS:A1994NN90000058
Sì, ma tipo non specificato
Inglese
Internazionale
19
551
553
2
The electrical properties of a capacitive humidity sensor, based on an aluminium sputtered film anodized in sulfuric acid, are investigated. A silicon substrate, covered with SiO2, was used because of the extensive use of this material in microelectronics. Al2O3 layers with controlled thickness were deposited by sputtering onto the porous Al2O3 film and their influence on the sensor performances was studied. Depending on the thickness of the sputtered alumina layer, the sensors show a linear response in different ranges of r.h. The response and recovery times are 0.5 and 15 s, respectively, for all humidity ranges; a low hysteresis effect was observed. The sensor performances are interpreted in terms of variation of the pore dimensions on the sensor surface.
4
info:eu-repo/semantics/article
262
Sberveglieri, Giorgio; G., Rinchetti; S., Groppelli; Faglia, Guido
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/35226
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