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A New Technique For The Preparation Of Highly Sensitive Hydrogen Sensors Based On Sno2 (Bi2o3) Thin-Films

SBERVEGLIERI, Giorgio;
1991-01-01
1991
Nessuno
PE3_5 Electronic properties of materials and transport
SENSORS AND ACTUATORS. B, CHEMICAL
sì
2-s2.0-0026208870
WOS:A1991HH77400047
Sì, ma tipo non specificato
Inglese
Internazionale
5
253
255
2
H-2 in air can be detected with sensors based on semiconductor oxides. A new technique for growing a hydrogen sensor based on SnO2(Bi2O3) thin films is presented here. The thin films have a thickness of 200-250 nm and the metals are in the atomic ratio Bi/Sn = (3-5) at.%/(97-95) at.%. The two metals are deposited by means of evaporation in a high vacuum; the metal-semiconductor phase transformation consists of a thermal cycle in air. The initial step involves a fast transition from room temperature up to 350-degrees-C over a few minutes, and causes a local partial melting of the metallic alloy. The surface of these thin films is made up of spongy agglomerates, having a surface area about 1000 times larger than a flat surface and covering about 60-70% of the total area. Sensors grown with this method also seem to be able to detect a few ppm of H-2 in air at 450-degrees-C with a response time of about 10-20 s.
4
info:eu-repo/semantics/article
262
Sberveglieri, Giorgio; S., Groppelli; P., Nelli; A., Camanzi
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/34183
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