IRIS Institutional Research Information System - OPENBS Open Archive UniBS

Bismuth-Doped Tin Oxide Thin-Film Gas Sensors

SBERVEGLIERI, Giorgio;
1991-01-01
1991
Nessuno
PE3_5 Electronic properties of materials and transport
SENSORS AND ACTUATORS. B, CHEMICAL
sì
2-s2.0-0026123672
WOS:A1991GG38900004
Sì, ma tipo non specificato
Inglese
Internazionale
3
183
189
6
In this paper a new method of preparing an H-2 sensor, based on an SnO2(Bi2O3) thin film, is presented. The deposition process of a tin and bismuth metallic film and its rapid thermal oxidation are described. SnO2 thin films, doped with 5 at.% Bi, show a maximum sensitivity (defined as S = DELTA-G/G%) equal to 15 000% for an air flow plus 1000 ppm H-2 at an operating temperature of 400-degree-C. An explanation of the mechanisms related to the formation of surface porosity, responsible for the high sensitivity of thin films to H-2, is given.
4
info:eu-repo/semantics/article
262
Sberveglieri, Giorgio; S., Groppelli; P., Nelli; A., Camanzi
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/34182
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 39
  • ???jsp.display-item.citation.isi??? 38
social impact