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Oxygen Gas-Sensing Characteristics For Zno(Li) Sputtered Thin-Films

SBERVEGLIERI, Giorgio;
1992-01-01
1992
Nessuno
PE3_5 Electronic properties of materials and transport
SENSORS AND ACTUATORS. B, CHEMICAL
sì
2-s2.0-0026837130
WOS:A1992HT65800081
Sì, ma tipo non specificato
Inglese
Internazionale
7
747
751
4
The oxygen gas-sensing characteristics of ZnO sputtered thin films, undoped or Li doped, versus their working temperatures are reported in this paper. The Li content and the O/Zn ratio are obtained by measurements of nuclear reaction analysis (NRA) and Rutherford back-scattering (RBS), respectively. The structural properties of ZnO and ZnO(Li) films are studied by means of X-ray diffraction (XRD), the preferential orientation of the thin films is found to be (002). We have measured the variation of the electrical conductance for O2 concentrations between 100 and 2 x 10(5) ppm by means of absorption isotherms at temperatures varying from 400 to 550-degrees-C. The oxygen sensitivity and the response times for these ZnO thin films are reported here; the possible interaction mechanisms of gaseous O2 with the bulk of pure or Li-doped films will also be given.
6
info:eu-repo/semantics/article
262
Sberveglieri, Giorgio; S., Groppelli; P., Nelli; F., Quaranta; A., Valentini; L., Vasanelli
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/34179
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