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Enhanced Response To Methane For Sno2 Thin-Films Prepared With The Cvd Technique

SBERVEGLIERI, Giorgio;DEPERO, Laura Eleonora;
1993-01-01
1993
Nessuno
PE3_5 Electronic properties of materials and transport
SENSORS AND ACTUATORS. B, CHEMICAL
sì
2-s2.0-0027681144
WOS:A1993LZ07600018
Inglese
16
334
337
3
SnO2 thin films were grown by means of the CVD technique, starting from dibutyltin diacetate as the precursory species. A good response of SnO2 thin films towards hydrogen, ethyl alcohol and especially methane was observed in the temperature range 300-500-degrees-C. The gas sensitivity DELTAG/G towards 1000 ppm of hydrogen, ethyl alcohol and methane at the temperature of 350-degrees-C was equal to 200, 100 and 30, respectively; on the contrary, the response to CO, NO(x) and other hydrocarbons was almost negligible. If the temperature is augmented from 350 to 500-degrees-C, an increase of the sensitivity to methane together with a lower sensitivity to hydrogen is observed. Therefore, the sensor selectivity to methane could be improved by pulsing the sensor operating temperature between 350 and 500-degrees-C.
7
info:eu-repo/semantics/article
262
Sberveglieri, Giorgio; P., Nelli; G. P., Benussi; Depero, Laura Eleonora; M., Zocchi; G., Rossetto; P., Zanella
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/34174
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