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Characterization Of Porous Al2o3 Sio2/Si Sensor For Low And Medium Humidity Ranges

SBERVEGLIERI, Giorgio;
1995-01-01
1995
Nessuno
PE3_5 Electronic properties of materials and transport
SENSORS AND ACTUATORS. B, CHEMICAL
sì
2-s2.0-0001227403
WOS:A1995QU90700010
Sì, ma tipo non specificato
Inglese
Internazionale
23
177
180
3
We present the preliminary a.c, electrical characterization of a humidity sensor based on a thin Al2O3 porous layer grown on an SiO2/Si substrate. The sensor is prepared by sputter deposition of a thin film of At, followed by its anodic oxidation in a sulphuric acid solution. A gold electrode is deposited on the substrate tilted at a grazing angle with respect to the substrate plane. The electrical a.c. measurements are made in the range 100 Hz-15 MHz and in a small chamber where either the relative humidity or the temperature could be easily changed. The sensor response is not influenced by interfering gases like CO, CO2, NO2, CH4, C2H6 and H-2. The experimental results of the impedance spectroscopy are compared with the frequency responses of different equivalent circuits of the sensor.
3
info:eu-repo/semantics/article
262
Sberveglieri, Giorgio; R., Murri; N., Pinto
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/34161
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