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CO and NO2 response of tin oxide silicon doped thin films

COMINI, Elisabetta;FAGLIA, Guido;SBERVEGLIERI, Giorgio
2001-01-01
2001
Nessuno
PE3_5 Electronic properties of materials and transport
SENSORS AND ACTUATORS. B, CHEMICAL
sì
2-s2.0-0035368915
WOS:000169444300044
Sì, ma tipo non specificato
Inglese
Internazionale
76
270
274
4
Research trends of gas sensors based on silicon doped tin oxide semiconducting thin films are presented. The films, deposited by DC and RF sputtering from targets of Sn and Si, are investigated by the volt-amperometric technique for electrical and gas-sensing properties. The layers are capable of sensing CO and NO2, no evidence of surface poisoning is detected, and recovery of the resistance is complete. The response of the sensors is stable and reproducible at all operating temperatures tested (2061-500 degreesC). The layers are capable of detecting concentrations as low as 15 ppm of CO and 200 ppb of NO2 with a response time of approximately 2-5 min. (C) 2001 Elsevier Science B.V. All rights reserved.
3
info:eu-repo/semantics/article
262
Comini, Elisabetta; Faglia, Guido; Sberveglieri, Giorgio
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/34103
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