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Semiconductor MoO3-TiO2 thin film gas sensors

COMINI, Elisabetta;FAGLIA, Guido;SBERVEGLIERI, Giorgio
2001-01-01
2001
Nessuno
PE3_5 Electronic properties of materials and transport
SENSORS AND ACTUATORS. B, CHEMICAL
sì
2-s2.0-0035876448
WOS:000169725800078
Sì, ma tipo non specificato
Inglese
Internazionale
77
472
477
5
The O-2, CO and NO2 gas sensing properties of MoO3-TiO2 thin films have been studied. The sol-gel process was employed to fabricate MoO3-TiO2 thin films onto sapphire and alumina transducers for gas sensing measurements. It was found the MoO3 dominated sensors have a lower optimal operating temperature of 370 degreesC than the TiO2 dominated sensors. The response of the sensors was stable and reproducible at operating temperatures below 400 degreesC. However, once the films were exposed to temperatures higher than 400 degreesC, repeatable gas sensing results could not be achieved. The low evaporation temperature of MoO3 component of the mixed system is believed to be the cause of the sensors instability and irreversibility at high operating temperatures. (C) 2001 Elsevier Science B.V. All rights reserved.
6
info:eu-repo/semantics/article
262
K., Galatsis; Y. X., Li; W., Wlodarski; Comini, Elisabetta; Faglia, Guido; Sberveglieri, Giorgio
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/34101
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