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Hydrogen and hydrocarbon gas sensing performance of Pt/WO3/SiC MROSiC devices

COMINI, Elisabetta;SBERVEGLIERI, Giorgio
2005-01-01
2005
Nessuno
PE3_5 Electronic properties of materials and transport
SENSORS AND ACTUATORS. B, CHEMICAL
sì
2-s2.0-25444494950
WOS:000232820900019
Sì, ma tipo non specificato
Inglese
Internazionale
111
111
116
5
Pt/WO3/SiC devices based Schottky diodes have been fabricated and their hydrogen and hydrocarbon gas sensing performance investigated. The semiconducting metal oxide WO3 films were 100 nm thick and prepared using r.f. magnetron sputtering. A Pt layer was deposited on the top of the WO3 forming the Schottky diode. The I-V characteristics have been analyzed, from which the change in the barrier height, subject to the introduction of the analyte gas, was calculated. The dynamic properties of these sensors were evaluated at constant biasing currents of 9 and 90 mu A, at temperatures between 300 and 700 degrees C. The results show the sensors have extremely stable baseline, with all responses being repeatable. Voltages shifts in excess of 1V were observed. (c) 2005 Elsevier B.V. All rights reserved.
5
info:eu-repo/semantics/article
262
S., Kandasamy; A., Trinchi; W., Wlodarski; Comini, Elisabetta; Sberveglieri, Giorgio
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/34077
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