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Structural characterization of V2O5-TiO2 thin films deposited by RF sputtering from a titanium target with vanadium insets

ALESSANDRI, Ivano;COMINI, Elisabetta;BONTEMPI, Elza;SBERVEGLIERI, Giorgio;DEPERO, Laura Eleonora
2005-01-01
2005
Nessuno
PE3_5 Electronic properties of materials and transport
SENSORS AND ACTUATORS. B, CHEMICAL
sì
2-s2.0-22944458221
WOS:000231100600010
Sì, ma tipo non specificato
Inglese
Internazionale
109
47
51
4
Structural and compositional analyses of different series of Ti-V-O thin films synthesized by RF-magnetron sputtering are presented. Vanadium content is changed by means of vanadium insets placed in the titanium target. By micro-X-ray fluorescence (microXRF), the V/Ti atomic ratio of the samples treated at 300 degrees C was found to be 0.18, 0.25 and 0.82. At low temperature, anatase is the main phase for samples with lower vanadium content. The increase of vanadium content comes along with an increase of the amorphous phase. Rutile phases dominate at high temperatures. V2O5 is detected after treatment at 600 degrees C, then vanishes. MicroXRF and miniSIMS analyses show that the vanadium content decreases as the temperature increases. By rmcroXRF the V/Ti atomic ratio after the thermal treatment at 800 degrees C was found to be about 0.06, 0.11 and 0.22. Conductance data are explained on the basis of these observations. (c) 2005 Elsevier B.V. All rights reserved.
5
info:eu-repo/semantics/article
262
Alessandri, Ivano; Comini, Elisabetta; Bontempi, Elza; Sberveglieri, Giorgio; Depero, Laura Eleonora
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/34072
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