In Part 1 of this work, we have devised the electrostatics and the dc current model of AlGaAs/GaAs high-mobility field-effect transistor (HEMT). In Part 2, the terminal charges, potential, electric field, and short-channel effects within the channel are worked out. Despite its accuracy, this HEMT model retains the simplicity of industry-standard transistor models. We demonstrate that it can also be formulated to ensure compatibility with the Penn State Philips (PSP) model.
A Design-Oriented Model for AlGaAs/GaAs and AlGaN/GaN HEMT—Part II
Colalongo L.;Faustini P.;Richelli A.
2026-01-01
Abstract
In Part 1 of this work, we have devised the electrostatics and the dc current model of AlGaAs/GaAs high-mobility field-effect transistor (HEMT). In Part 2, the terminal charges, potential, electric field, and short-channel effects within the channel are worked out. Despite its accuracy, this HEMT model retains the simplicity of industry-standard transistor models. We demonstrate that it can also be formulated to ensure compatibility with the Penn State Philips (PSP) model.File in questo prodotto:
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