In this article, we show a simple power device architecture that combines the features of the SIT and the power MOSFET: insulated gate, positive threshold, fast switching, current deep in the semiconductor, and compact design. It has the conduction characteristics of a BSIT, and it is voltage-controlled as a MOSFET. Since the large part of the current is not confined at the semiconductor/insulator interface, we believe that it is a promising structure to take advantage of wide bandgap semiconductors that, despite the high mobility and breakdown voltage, still lack high-quality oxide-semiconductor interfaces. The device architecture is devised by means of device simulation both in static and dynamic conditions.
Bipolar Static Induction Transistor With Insulated Gate
Colalongo L.;Richelli A.
2022-01-01
Abstract
In this article, we show a simple power device architecture that combines the features of the SIT and the power MOSFET: insulated gate, positive threshold, fast switching, current deep in the semiconductor, and compact design. It has the conduction characteristics of a BSIT, and it is voltage-controlled as a MOSFET. Since the large part of the current is not confined at the semiconductor/insulator interface, we believe that it is a promising structure to take advantage of wide bandgap semiconductors that, despite the high mobility and breakdown voltage, still lack high-quality oxide-semiconductor interfaces. The device architecture is devised by means of device simulation both in static and dynamic conditions.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
