In this paper the CMOS amplifier behaviour has been further investigated respect to the previous works in the literature. An exhaustive scenario for the EMI pollution has been considered: the injected interferences can indeed directly reach the amplifier pins or can be coupled from the PCB ground. This is a key point for evaluating also the susceptibility from the EMI coupled to the output pin, which is disclosed as a critical point. The investigated topologies are basically derived from the Miller and the Folded Cascode, which are well-known and widely used by the CMOS analog designers; all of them are re-designed in UMC 180 nm CMOS process in order to have a fair comparison.
Complementary metal oxide semiconductor amplifier behaviour considering different points of electromagnetic interference injection
Richelli A.;Colalongo L.;Kovacs Zsolt.
2019-01-01
Abstract
In this paper the CMOS amplifier behaviour has been further investigated respect to the previous works in the literature. An exhaustive scenario for the EMI pollution has been considered: the injected interferences can indeed directly reach the amplifier pins or can be coupled from the PCB ground. This is a key point for evaluating also the susceptibility from the EMI coupled to the output pin, which is disclosed as a critical point. The investigated topologies are basically derived from the Miller and the Folded Cascode, which are well-known and widely used by the CMOS analog designers; all of them are re-designed in UMC 180 nm CMOS process in order to have a fair comparison.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
