IRIS Institutional Research Information System - OPENBS Open Archive UniBS
il nuovo catalogo dedicato alla raccolta e alla disseminazione della produzione scientifica dell'Università degli Studi di
Brescia, denominato OPENBS. E' possibile cercare pubblicazioni in OPENBS:
- per parola chiave, utilizzando la barra di ricerca situata in alto
- per filtro di ricerca (Autore, Titolo, Riviste), utilizzando il pulsante Sfoglia
- specificando criteri di ricerca con possibilità di aggiungere gradualmente più filtri (Autore, Data, Tipologia,..) che
perfezionino i risultati, utilizzando la finestra Ricerca - per elemento di filtro di ricerca (e.g. per un elemento di Tipologia: contributo su rivista) nella sezione Scopri
EnglishWe investigated the effect of annealing on the crystalline quality of Ge epilayers grown on low porosity porous silicon (pSi) buffer layer and on bulk Si by LEPECVD. High- resolution XRD analysis indicates that during annealing, Ge grown on pSi undergoes a stronger reorganization compared to Ge grown on Si in terms of strain distribution and mosaic broadening. Strong morphological reorganization of the pSi buffer during annealing leads to a stronger reduction in Ge mosaicity as compared to annealed Ge on bulk Si. This improvement is attributed to bending of threading dislocations in a plane parallel to the growth interface, which is attributed to a strain field introduced by pSi within Ge during their simultaneous reorganization at high-temperature. After cyclic annealing at 750 8C, plan view transmission electron micro- scopy analysis revealed a threading dislocation density for Ge on pSi which is about one order of magnitude smaller than for annealed Ge on bulk Si. Ge on pSi virtual substrates thus represent a promising platform for the growth of III–V and GeSn semiconductors on Si with a low cost and high- throughput technique.
| Titolo: | Enhanced reduction in threading dislocation density in Ge grown on porous silicon during annealing due to porous buffer reconstruction |
| Autori: | |
| Data di pubblicazione: | 2016 |
| Rivista: | |
| Abstract: | We investigated the effect of annealing on the crystalline quality of Ge epilayers grown on low porosity porous silicon (pSi) buffer layer and on bulk Si by LEPECVD. High- resolution XRD analysis indicates that during annealing, Ge grown on pSi undergoes a stronger reorganization compared to Ge grown on Si in terms of strain distribution and mosaic broadening. Strong morphological reorganization of the pSi buffer during annealing leads to a stronger reduction in Ge mosaicity as compared to annealed Ge on bulk Si. This improvement is attributed to bending of threading dislocations in a plane parallel to the growth interface, which is attributed to a strain field introduced by pSi within Ge during their simultaneous reorganization at high-temperature. After cyclic annealing at 750 8C, plan view transmission electron micro- scopy analysis revealed a threading dislocation density for Ge on pSi which is about one order of magnitude smaller than for annealed Ge on bulk Si. Ge on pSi virtual substrates thus represent a promising platform for the growth of III–V and GeSn semiconductors on Si with a low cost and high- throughput technique. |
| Handle: | http://hdl.handle.net/11379/493652 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| Phys. Status Solidi A 2015 Calabrese-Enhanced reduction in threading dislocation density in Ge grown on porous silicon during annealing due to porous buffer reconstruction.pdf | Articolo Principale | Full Text | PUBBLICO - Pubblico con Copyright | Utenti riconosciuti Richiedi una copia |
http://hdl.handle.net/11379/493652
Copyright © 2021