Using a concept of asymmetric side gate and main gate, it is shown that it is possible to realize unipolar transport (both p-type and n-type) in a thin-film transistor with a high-performance ambipolar polymer semiconductor. In a complementary inverter, this results in higher noise margin and DC gain.
Asymmetric Split-Gate Ambipolar Transistor and Its Circuit Application to Complementary Inverter
TORRICELLI, Fabrizio;GHITTORELLI, MATTEO;
2016-01-01
Abstract
Using a concept of asymmetric side gate and main gate, it is shown that it is possible to realize unipolar transport (both p-type and n-type) in a thin-film transistor with a high-performance ambipolar polymer semiconductor. In a complementary inverter, this results in higher noise margin and DC gain.File in questo prodotto:
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