In amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs), the electron mobility easily exceeds 10²/Vs and degenerate band conduction is observed. On the other hand, the field-effect mobility is gate voltage-dependent. Here, we propose a physical model for a-IGZO TFTs accounting for both the non-degenerate and degenerate conductions of trapped and free charges. The comparison between the model and the measurements shows that: 1) the shape of the drain current is almost completely defined by the localized density of states and 2) a transition from non-degenerate-to-degenerate conductions is always observed. This explains the measured gate voltage-dependent field-effect mobility and provides a simple and unified physical picture of the charge transport in a-IGZO TFTs.
Physical Modeling of Amorphous InGaZnO Thin-Film Transistors: The Role of Degenerate Conduction
GHITTORELLI, MATTEO;TORRICELLI, Fabrizio;KOVACS VAJNA, Zsolt Miklos
2016-01-01
Abstract
In amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs), the electron mobility easily exceeds 10²/Vs and degenerate band conduction is observed. On the other hand, the field-effect mobility is gate voltage-dependent. Here, we propose a physical model for a-IGZO TFTs accounting for both the non-degenerate and degenerate conductions of trapped and free charges. The comparison between the model and the measurements shows that: 1) the shape of the drain current is almost completely defined by the localized density of states and 2) a transition from non-degenerate-to-degenerate conductions is always observed. This explains the measured gate voltage-dependent field-effect mobility and provides a simple and unified physical picture of the charge transport in a-IGZO TFTs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
