The electronic structure of La1-xNaxMnO3 (x = 0, 0.08, and 0.15) thin films is investigated by resonant X-ray emission spectroscopy (RXES) and X-ray absorption spectroscopy (XAS). The excitation energy of the Mn dd transitions is derived. For different carrier doping concentrations, a significant increase in the emission of the low-energy excitations is observed. This finding is consistent with the less-pronounced structural distortion and the increased density of empty eg-like majority states in the lower part of the conduction band of the lightly doped samples.
Doping dependence of the electronic structure of La1-xNaxMnO3 by resonant X-ray emission and X-ray absorption spectroscopy
ALESSANDRI, Ivano;
2004-01-01
Abstract
The electronic structure of La1-xNaxMnO3 (x = 0, 0.08, and 0.15) thin films is investigated by resonant X-ray emission spectroscopy (RXES) and X-ray absorption spectroscopy (XAS). The excitation energy of the Mn dd transitions is derived. For different carrier doping concentrations, a significant increase in the emission of the low-energy excitations is observed. This finding is consistent with the less-pronounced structural distortion and the increased density of empty eg-like majority states in the lower part of the conduction band of the lightly doped samples.File in questo prodotto:
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