A New Technique For Growing Large Surface-Area Sno2 Thin-Film (Rgto Technique)

SBERVEGLIERI, Giorgio;FAGLIA, Guido;
1990-01-01

1990
Nessuno
PE3_5 Electronic properties of materials and transport
Sì, ma tipo non specificato
Inglese
Internazionale
5
1231
1233
2
A new technique for growing SnO2 thin films with high surface area is described, based on tin rheotaxial growth and its thermal oxidation (RGTO). Tin thin films, when grown, present a surface characterized by spheroidal agglomerates due essentially to the surface tension of the liquid metal; these agglomerates do not seem to have any electrical continuity. By means of a thermal oxidation, both the transformation of the metal into a semiconductor and the thin film continuity are obtained, owing to the volume increase during the above-mentioned phase transformation. After this annealing cycle, SnO2 thin films are slightly oriented in the (101) direction and present an electrical resistivity equal to about 10(2)-OMEGA-cm. So, the surfaces of SnO2 films appear to be formed by spongeous agglomerates, which are in electrical contact with the nearest agglomerates. SnO2 thin films grown by this method show a high sensitivity (defined as the relative percent conductance variation) to H-2; in fact, sensitivity to 200 PPM H-2 in synthetic air at ambient pressure is equal to 400%. It seems to be possible to prepare other metal oxide semiconducting thin films with a high surface area using this technique.
5
info:eu-repo/semantics/article
262
Sberveglieri, Giorgio; Faglia, Guido; S., Groppelli; P., Nelli; A., Camanzi
1 Contributo su Rivista::1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/35229
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