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Oxidation of Sn thin films to SnO2. Micro-Raman mapping and x-ray diffraction studies

DEPERO, Laura Eleonora;COMINI, Elisabetta;SBERVEGLIERI, Giorgio;
1998-01-01
1998
Nessuno
PE3_5 Electronic properties of materials and transport
JOURNAL OF MATERIALS RESEARCH
sì
2-s2.0-0032166040
WOS:000075621600017
Sì, ma tipo non specificato
Inglese
Internazionale
13
2457
2460
3
The oxidation of tin layers deposited onto alumina substrates is investigated with the aim to identify the different steps of the process and obtain information on the sample homogeneity, phase segregation, and degree of oxidation. It is shown that at least three phases coexist at 450 degrees C, Sn, SnO, and SnO2, and remarkable inhomogeneities, already visible at an optical inspection, are found in the thin film. A micro-Raman mapping of the layer shows that these inhomogeneities are related to the presence of different Sn oxidation states, as evidenced by the inhomogeneous distribution of SnO and SnO, Raman bands. The thin him becomes homogeneous after annealing treatments above 550 degrees C, where only the SnO2 cassiterite phase is detected.
7
info:eu-repo/semantics/article
262
L., Sangaletti; Depero, Laura Eleonora; B., Allieri; F., Pioselli; Comini, Elisabetta; Sberveglieri, Giorgio; M., Zocchi
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/34124
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