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Towards a deeper comprehension of the interaction mechanisms between mesoporous silicon and NO2

BARATTO, Camilla;COMINI, Elisabetta;FAGLIA, Guido;SBERVEGLIERI, Giorgio;
2000-01-01
2000
Nessuno
PE3_5 Electronic properties of materials and transport
PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH
sì
2-s2.0-0034427624
WOS:000165756500077
Sì, ma tipo non specificato
Inglese
Internazionale
182
465
471
6
The high sensitivity of a room-temperature porous silicon NO2 sensor has required an investigation of surface dynamics between NO2 and mesoporous silicon. By means of electrical measurements in gas atmosphere and in-situ FTIR, evidence of a new interaction mechanism strongly affecting the electrical conductivity of the porous silicon (PS) sensors has been found. Absorption bands have been attributed to NO2-, suggesting carrier transfer from the silicon wires to NO2, thanks to its high electronic affinity. The models proposed until now, explaining the high resistivity of mesoporous silicon, strongly support this interpretation.
11
info:eu-repo/semantics/article
262
L., Boarino; M., Rocchia; Baratto, Camilla; A. M., Rossi; E., Garrone; S., Borini; F., Geobaldo; Comini, Elisabetta; Faglia, Guido; Sberveglieri, Gior...espandi
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/34105
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