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Scanning electron microscopy of dopant distribution in semiconductors

FERRONI, Matteo;SBERVEGLIERI, Giorgio
2005-01-01
2005
Nessuno
PE3_5 Electronic properties of materials and transport
APPLIED PHYSICS LETTERS
sì
2-s2.0-17944363459
WOS:000228044700026
Sì, ma tipo non specificato
Inglese
Internazionale
86
-
-
We show that, in scanning electron microscopy, it is possible to use the secondary electrons produced by the backscattered electrons to obtain chemical. information on the dopant distribution in Sb-implanted silicon. Theoretical investigations and experimental data concur to point out that the resolution of the method is defined by the probe size-values of 1 nm or even lower are possible in the present instruments-while the contrast depends on the electron range and on the boundary conditions. A proper choice of beam energy and boundaries of the doped layer may allow a sensitivity below 1%, suitable to characterize the high-dose near-surface region of the ultrashallow junctions in cross-sectioned bulk specimens. (c) 2005 American Institute of Physics.
5
info:eu-repo/semantics/article
262
P. G., Merli; V., Morandi; G., Savini; Ferroni, Matteo; Sberveglieri, Giorgio
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/34090
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