Tunneling induced quantum interference experienced by an incident probe in asymmetric double quantum wells can easily be modulated by means of an external control light beam. This phenomenon, which is here examined within the dressed-state picture, can be exploited to devise a novel all-optical ultrafast switch. For a suitably designed semiconductor heterostructure, the switch is found to exhibit frequency bandwidths of the order of 0.1 THz and response and recovery times of about 1 ps.

Ultrafast All Optical Switching via Tunable Fano Interference

ARTONI, Maurizio;
2005-01-01

Abstract

Tunneling induced quantum interference experienced by an incident probe in asymmetric double quantum wells can easily be modulated by means of an external control light beam. This phenomenon, which is here examined within the dressed-state picture, can be exploited to devise a novel all-optical ultrafast switch. For a suitably designed semiconductor heterostructure, the switch is found to exhibit frequency bandwidths of the order of 0.1 THz and response and recovery times of about 1 ps.
2005
Nessuno
PE1_20 Application of mathematics in sciences
PE2_6 Electromagnetism
PE2_9 Optics, non-linear optics and nano-optics
PE3_13 Nanophysics: nanoelectronics, nanophotonics, nanomagnetism
PE7_5 Micro- and nanoelectronics, optoelectronics
PE8_7 Micro(system) engineering
Esperti anonimi
Inglese
Internazionale
STAMPA
95
57401
57405
5
Altre Istituz. pubb. estere
7
info:eu-repo/semantics/article
262
JIN HUI, Wu; JIN YUE, Gao; JI HUA, Xu; L., Silvestri; Artoni, Maurizio; G. C., LA ROCCA; F., Bassani
1 Contributo su Rivista::1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/22223
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