Modifications of GaAs/air interface under x-ray exposure have been investigated by means of x-ray reflectometry (XRR). For this purpose a GaAs/AlAs multilayer system was continuously monitored for 90 h while acquiring XRR profiles. Three different starting models for the oxide/contaminants layer were tested for the analysis of XRR data and discussed. The main effect of x-ray exposure, revealed by the three different approaches, is an increase in the thickness of the gallium and arsenic oxides until a saturation value (about 3.0 nm) is reached after about 50 h. Total reflection x-ray fluorescence analysis performed on a couple of twin samples, either irradiated and nonirradiated, confirms that the oxidation process is promoted by x-ray exposure and indicates the presence of a richer As oxide phase at the surface of the x-ray irradiated samples.
X-ray reflectivity and total reflection x-ray fluorescence study of surface oxide evolution in a GaAs/AlAs multilayer system
COLOMBI, Paolo;BONTEMPI, Elza;DEPERO, Laura Eleonora;
2009-01-01
Abstract
Modifications of GaAs/air interface under x-ray exposure have been investigated by means of x-ray reflectometry (XRR). For this purpose a GaAs/AlAs multilayer system was continuously monitored for 90 h while acquiring XRR profiles. Three different starting models for the oxide/contaminants layer were tested for the analysis of XRR data and discussed. The main effect of x-ray exposure, revealed by the three different approaches, is an increase in the thickness of the gallium and arsenic oxides until a saturation value (about 3.0 nm) is reached after about 50 h. Total reflection x-ray fluorescence analysis performed on a couple of twin samples, either irradiated and nonirradiated, confirms that the oxidation process is promoted by x-ray exposure and indicates the presence of a richer As oxide phase at the surface of the x-ray irradiated samples.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
