ROSSONI, ANGELO

ROSSONI, ANGELO  

Dipartimento di Ingegneria dell'Informazione  

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Titolo Data di pubblicazione Autore(i) File
Impact of the Inter-Fin Space on Stress Modulation and FinFET Transistor Performance 1-gen-2025 Rossoni, A.; Brozek, T.; Saxena, S.; Khamankar, R.; Kovacs-Vajna, Z. M.
Layout experiments and test structures to characterize Local Layout Effects due to mechanical stress in FinFET transistors 1-gen-2025 Rossoni, A.; Brozek, T.; Saxena, S.; Khamankar, R.; Hess, C.; Huang, J.; Teng, Y.; Kovacs-Vajna, Z.; Quarantelli, M.
Modeling Stress Effects from Fin Isolation in 7nm FinFET Transistors 1-gen-2024 Rossoni, Angelo; Kovacs-Vajna, Zsolt M.; Colalongo, Luigi; Khamankar, Rajesh; Saxena, Sharad; Brozek, Tomasz
Stress-related Local Layout Effects in FinFET Technology and Device Design Sensitivity In corso di stampa Rossoni, Angelo; Brozek, Tomasz; Saxena, Sharad; Khamankar, Rajesh; Colalongo, Luigi; Kovacs-Vajna, Zsolt M.
Stress-Related Local Layout Effects in FinFET Technology and Device Design Sensitivity 1-gen-2025 Rossoni, A.; Brozek, T.; Saxena, S.; Khamankar, R.; Colalongo, L.; Kovacs-Vajna, Z. M.