In this paper, a sensor able to measure very low humidity contents (10ppmv) and working at temperatures as low as -60°C is described. The geometry of the sensor is a double capacitor on alumina substrate with the inner electrodes of sputtered Ti and the outer one of a very thin Au evaporated film (100A-150A). The dielectric sensing layer is an Al2O3 porous film obtained by double anodization in sulphuric acid of an Al sputtered thin film. Electrical response of the device was measured in a test chamber by impedance spectroscopy for different water vapour contents in the range 0-200 ppmv, to simulate the conditions of the atmosphere explored by balloon flights.
Humidity sensor operating at very low temperature
Sberveglieri G.;Faglia G.;Ferrari V.;Marioli D.
1995-01-01
Abstract
In this paper, a sensor able to measure very low humidity contents (10ppmv) and working at temperatures as low as -60°C is described. The geometry of the sensor is a double capacitor on alumina substrate with the inner electrodes of sputtered Ti and the outer one of a very thin Au evaporated film (100A-150A). The dielectric sensing layer is an Al2O3 porous film obtained by double anodization in sulphuric acid of an Al sputtered thin film. Electrical response of the device was measured in a test chamber by impedance spectroscopy for different water vapour contents in the range 0-200 ppmv, to simulate the conditions of the atmosphere explored by balloon flights.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
