Electron microscopy analysis of the RGTO technique for high sensitivity gas sensor development

DEPERO, Laura Eleonora;SBERVEGLIERI, Giorgio
1997-01-01

1997
Nessuno
IOP Conference Series
PE3_5 Electronic properties of materials and transport
Sì, ma tipo non specificato
Inglese
Internazionale
-
593
596
3
The mechanism of formation by RGTO of thin SnO2 films is described. Different thicknesses of the Sn layer and oxidation times are analysed in order to follow step by step the oxidation mechanism and the final structure of the thin film. Special emphasis is placed on the morphological changes occurring during a long term oxidation, which are very important in order to obtain a reliable active layer for gas sensing.
2 Contributo in Volume::2.1 Contributo in volume (Capitolo o Saggio)
7
268
none
A., Dieguez; A., Romano Rodriguez; J. R., Morante; P., Nelli; Depero, Laura Eleonora; L., Sangaletti; Sberveglieri, Giorgio
info:eu-repo/semantics/bookPart
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11379/34132
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