HELAL, HICHAM
HELAL, HICHAM
Dipartimento di Ingegneria dell'Informazione
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Risultati 1 - 3 di 3 (tempo di esecuzione: 0.009 secondi).
A new approach to studying the electrical behavior and the inhomogeneities of the Schottky barrier height
2022-01-01 Helal, H.; Benamara, Z.; Comini, E.; Kacha, A. H.; Rabehi, A.; Khirouni, K.; Monier, G.; Robert-Goumet, C.; Dominguez, M.
Electrical characterization of Au/GaN/n-GaAs Schottky nano-structuresin a wide temperature range
2022-01-01 Helal, Hicham.; Benamara, Zineb.; Kacha, Arslane. Hatem.; Kirouni, Kamel.; Monier, Guillamme.; Goumet, Christine. Robert.; Tizi, Schahrazade.; Comini, Elisabetta.
Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using Lambert W Function
2022-01-01 Rabehi, A.; Rabehi, A.; Douara, A.; Helal, H.; Baitiche, O.; Akkal, B.; Amrani, M.; Tizi, S.; Benamara, Z.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| A new approach to studying the electrical behavior and the inhomogeneities of the Schottky barrier height | 1-gen-2022 | Helal, H.; Benamara, Z.; Comini, E.; Kacha, A. H.; Rabehi, A.; Khirouni, K.; Monier, G.; Robert-Goumet, C.; Dominguez, M. | |
| Electrical characterization of Au/GaN/n-GaAs Schottky nano-structuresin a wide temperature range | 1-gen-2022 | Helal, Hicham.; Benamara, Zineb.; Kacha, Arslane. Hatem.; Kirouni, Kamel.; Monier, Guillamme.; Goumet, Christine. Robert.; Tizi, Schahrazade.; Comini, Elisabetta. | |
| Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using Lambert W Function | 1-gen-2022 | Rabehi, A.; Rabehi, A.; Douara, A.; Helal, H.; Baitiche, O.; Akkal, B.; Amrani, M.; Tizi, S.; Benamara, Z. |